IPD053N06NATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 18A/45A TO252-3
$1.81
Available to order
Reference Price (USD)
2,500+
$0.64495
5,000+
$0.61270
12,500+
$0.58967
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IPD053N06NATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IPD053N06NATMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 5.3mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IRFH5007TRPBF
Panjit International Inc.
PJQ5461A-AU_R2_000A1
Fairchild Semiconductor
SFR9220TM
Renesas Electronics America Inc
2SK2511-A
STMicroelectronics
STB22N60DM6
Vishay Siliconix
SI5419DU-T1-GE3
Infineon Technologies
IPP100N04S303AKSA1
Nexperia USA Inc.
PMV75UP,215
Infineon Technologies
AUIRF3315S
Fairchild Semiconductor