IPD042P03L3GBTMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 30V 70A TO252-3
$0.00
Available to order
Reference Price (USD)
2,500+
$0.58065
5,000+
$0.55162
Exquisite packaging
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Boost your electronic applications with IPD042P03L3GBTMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPD042P03L3GBTMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
- Vgs(th) (Max) @ Id: 2V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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