IPB60R250CPATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 12A TO263-3
$1.37
Available to order
Reference Price (USD)
1+
$1.37000
500+
$1.3563
1000+
$1.3426
1500+
$1.3289
2000+
$1.3152
2500+
$1.3015
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover IPB60R250CPATMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Central Semiconductor Corp
CMUDM8001 TR PBFREE
STMicroelectronics
STWA12N120K5
Alpha & Omega Semiconductor Inc.
AOD3T40P
Infineon Technologies
IPDD60R125G7XTMA1
IXYS
IXTH34N65X2
STMicroelectronics
STL8N6F7
onsemi
2SK4125
Fairchild Semiconductor
FDS3682_NL
onsemi
NTR5198NLT1G
Fairchild Semiconductor