IPB50R199CPATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 550V 17A TO263-3
$2.81
Available to order
Reference Price (USD)
1,000+
$1.70155
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IPB50R199CPATMA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPB50R199CPATMA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 660µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 139W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Rohm Semiconductor
R5016FNX
Nexperia USA Inc.
PSMN7R0-30YL,115
Rohm Semiconductor
RT1A040ZPTR
onsemi
ATP202-TL-H
Microchip Technology
APT8030JVFR
Diotec Semiconductor
MMBT7002K
Harris Corporation
RF1S9640
Nexperia USA Inc.
PSMN2R2-30YLC,115
onsemi
FDH50N50-F133
Infineon Technologies