IPB032N10N5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 166A TO263-7
$6.29
Available to order
Reference Price (USD)
1,000+
$3.18888
2,000+
$3.02944
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IPB032N10N5ATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPB032N10N5ATMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 83A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 125µA
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 187W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Related Products
STMicroelectronics
STB6N80K5
Microchip Technology
APTM100UM65SAG
Panjit International Inc.
PJQ4460AP_R2_00001
Infineon Technologies
IRF6715MTRPBF
onsemi
NTMSD3P102R2SG
Infineon Technologies
IRFTS9342TRPBF
Toshiba Semiconductor and Storage
TPH1R306PL1,LQ
Panjit International Inc.
PJW7N04_R2_00001
onsemi
NTD14N03RT4G
Diodes Incorporated