IPB016N08NF2SATMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V PG-TO263-3
$3.13
Available to order
Reference Price (USD)
1+
$3.13200
500+
$3.10068
1000+
$3.06936
1500+
$3.03804
2000+
$3.00672
2500+
$2.9754
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IPB016N08NF2SATMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPB016N08NF2SATMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Rohm Semiconductor
RW4E065GNTCL1
Infineon Technologies
IPS60R280PFD7SAKMA1
STMicroelectronics
SCTH40N120G2V-7
Harris Corporation
IRFD310
Diodes Incorporated
DMPH1006UPSQ-13
Renesas Electronics America Inc
2SK972-94-E
Renesas Electronics America Inc
UPA2592T1H-T1-AT
STMicroelectronics
STFU26N60M2
Renesas Electronics America Inc
2SJ356(0)-T1-AY
Diodes Incorporated