IPB014N06NATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 34A/180A TO263-7
$5.27
Available to order
Reference Price (USD)
1,000+
$2.10025
2,000+
$1.99524
5,000+
$1.92023
Exquisite packaging
Discount
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Experience the power of IPB014N06NATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IPB014N06NATMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 143µA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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