IPA80R1K2P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 4.5A TO220
$1.80
Available to order
Reference Price (USD)
1+
$1.54000
10+
$1.36400
100+
$1.07830
500+
$0.83620
1,000+
$0.66017
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IPA80R1K2P7XKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPA80R1K2P7XKSA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-FP
- Package / Case: TO-220-3 Full Pack
Related Products
Vishay Siliconix
IRFP254PBF
Diodes Incorporated
DMP1012UCB9-7
Microchip Technology
TN2130K1-G
Infineon Technologies
IRFR2905ZTRPBF
Vishay Siliconix
IRF640PBF
Toshiba Semiconductor and Storage
TPN3R704PL,L1Q
Nexperia USA Inc.
BUK7Y153-100EX
Vishay Siliconix
SQJ446EP-T1_BE3
Alpha & Omega Semiconductor Inc.
AO3442
Rohm Semiconductor