IPA50R650CE
Infineon Technologies
Infineon Technologies
MOSFET N-CH 500V 6.1A TO220-FP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IPA50R650CE, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IPA50R650CE is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
- Vgs(th) (Max) @ Id: 3.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
- FET Feature: Super Junction
- Power Dissipation (Max): 27.2W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
Related Products
onsemi
FQE10N20LCTU
IXYS
IXFK180N10
Infineon Technologies
IRF6614TR1PBF
Vishay Siliconix
IRF820L
Vishay Siliconix
IRFI9620G
Infineon Technologies
IPW60R280C6
Vishay Siliconix
SIR788DP-T1-GE3
STMicroelectronics
STW29NK50Z
Infineon Technologies
IPB16CN10N G
Vishay Siliconix