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IPA50R190CE

Infineon Technologies
IPA50R190CE Preview
Infineon Technologies
MOSFET N-CH 500V 18.5A TO220-FP
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 510µA
  • Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 32W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack

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