IMZA120R007M1HXKSA1
Infineon Technologies
Infineon Technologies
SIC DISCRETE
$108.08
Available to order
Reference Price (USD)
1+
$108.08000
500+
$106.9992
1000+
$105.9184
1500+
$104.8376
2000+
$103.7568
2500+
$102.676
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IMZA120R007M1HXKSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IMZA120R007M1HXKSA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
- Vgs(th) (Max) @ Id: 5.2V @ 47mA
- Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 18 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 9170 nF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 750W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-8
- Package / Case: TO-247-4
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