IMZ120R220M1HXKSA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 13A TO247-4
$12.39
Available to order
Reference Price (USD)
1+
$12.39000
500+
$12.2661
1000+
$12.1422
1500+
$12.0183
2000+
$11.8944
2500+
$11.7705
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IMZ120R220M1HXKSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IMZ120R220M1HXKSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 220mOhm @ 4A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
- Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
- Vgs (Max): +23V, -7V
- Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-1
- Package / Case: TO-247-4
Related Products
Infineon Technologies
IPP80P04P4L06AKSA1
Vishay Siliconix
SUP90P06-09L-E3
Microchip Technology
APT5015SVFRG
Rohm Semiconductor
RSD200N05TL
Diodes Incorporated
DMP3098LSS-13
Texas Instruments
CSD17327Q5A
Infineon Technologies
BSS606NH6327XTSA1
Nexperia USA Inc.
PMF170XP,115
Infineon Technologies
IPA95R750P7XKSA1
Vishay Siliconix