IMW120R350M1HXKSA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 4.7A TO247-3
$9.62
Available to order
Reference Price (USD)
1+
$9.62000
500+
$9.5238
1000+
$9.4276
1500+
$9.3314
2000+
$9.2352
2500+
$9.139
Exquisite packaging
Discount
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Boost your electronic applications with IMW120R350M1HXKSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IMW120R350M1HXKSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 455mOhm @ 2A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
- Vgs (Max): +23V, -7V
- Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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