IKW50N65ET7XKSA1
Infineon Technologies
Infineon Technologies
IKW50N65ET7XKSA1
$6.04
Available to order
Reference Price (USD)
1+
$6.04000
500+
$5.9796
1000+
$5.9192
1500+
$5.8588
2000+
$5.7984
2500+
$5.738
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose IKW50N65ET7XKSA1 Single IGBTs by Infineon Technologies for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Infineon Technologies's reputation for quality makes IKW50N65ET7XKSA1 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
- Power - Max: 273 W
- Switching Energy: 1.2mJ (on), 850µJ (off)
- Input Type: Standard
- Gate Charge: 290 nC
- Td (on/off) @ 25°C: 26ns/350ns
- Test Condition: 400V, 50A, 9Ohm, 15V
- Reverse Recovery Time (trr): 93 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
Related Products
Infineon Technologies
IKW15N120BH6XKSA1
Rohm Semiconductor
RGW80TS65GC11
Infineon Technologies
IKQ120N60TXKSA1
IXYS
IXXH60N65B4
IXYS
IXYA20N120B4HV
onsemi
NGP8203N
IXYS
IXXK200N65B4
Infineon Technologies
SGB20N60E3045A
Diodes Incorporated
DGTD65T15H2TF
Infineon Technologies