IKW40N65ET7XKSA1
Infineon Technologies
Infineon Technologies
IKW40N65ET7XKSA1
$5.24
Available to order
Reference Price (USD)
1+
$5.24000
500+
$5.1876
1000+
$5.1352
1500+
$5.0828
2000+
$5.0304
2500+
$4.978
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The IKW40N65ET7XKSA1 Single IGBT by Infineon Technologies sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Infineon Technologies for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 76 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A
- Power - Max: 230.8 W
- Switching Energy: 1.05mJ (on), 590µJ (off)
- Input Type: Standard
- Gate Charge: 235 nC
- Td (on/off) @ 25°C: 20ns/310ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 85 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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