IKFW75N65ES5XKSA1
Infineon Technologies
Infineon Technologies
IKFW75N65ES5XKSA1
$8.24
Available to order
Reference Price (USD)
1+
$8.24000
500+
$8.1576
1000+
$8.0752
1500+
$7.9928
2000+
$7.9104
2500+
$7.828
Exquisite packaging
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The IKFW75N65ES5XKSA1 Single IGBT from Infineon Technologies delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Infineon Technologies's commitment to innovation ensures IKFW75N65ES5XKSA1 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
- Power - Max: 148 W
- Switching Energy: 1.48mJ (on), 660µJ (off)
- Input Type: Standard
- Gate Charge: 144 nC
- Td (on/off) @ 25°C: 24ns/152ns
- Test Condition: 400V, 60A, 8Ohm, 15V
- Reverse Recovery Time (trr): 71 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-HSIP247-3-2
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