IKD10N60RFATMA1
Infineon Technologies
Infineon Technologies
IGBT 600V 20A 150W PG-TO252-3
$1.78
Available to order
Reference Price (USD)
2,500+
$0.82824
5,000+
$0.81802
Exquisite packaging
Discount
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Maximize energy efficiency with IKD10N60RFATMA1 Single IGBTs by Infineon Technologies, a trusted name in discrete semiconductors. Suitable for solar inverters, motor controllers, and more, these transistors feature low conduction loss and high switching frequency. Their robust design ensures long-term performance even in harsh environments. Choose IKD10N60RFATMA1 for your next project and experience the Infineon Technologies difference. Submit your inquiry today for expert assistance!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: 150 W
- Switching Energy: 190µJ (on), 160µJ (off)
- Input Type: Standard
- Gate Charge: 64 nC
- Td (on/off) @ 25°C: 12ns/168ns
- Test Condition: 400V, 10A, 26Ohm, 15V
- Reverse Recovery Time (trr): 72 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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