IHW20N120R2
Infineon Technologies
Infineon Technologies
IGBT 1200V 40A 330W TO247-3
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Optimize power control with IHW20N120R2 Single IGBTs from Infineon Technologies, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Infineon Technologies ensures IHW20N120R2 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 20A
- Power - Max: 330 W
- Switching Energy: 1.2mJ (off)
- Input Type: Standard
- Gate Charge: 143 nC
- Td (on/off) @ 25°C: -/359ns
- Test Condition: 600V, 20A, 15Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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