IGOT60R070D1AUMA3
Infineon Technologies
Infineon Technologies
GANFET N-CH
$21.96
Available to order
Reference Price (USD)
1+
$21.96000
500+
$21.7404
1000+
$21.5208
1500+
$21.3012
2000+
$21.0816
2500+
$20.862
Exquisite packaging
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Upgrade your electronic designs with IGOT60R070D1AUMA3 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IGOT60R070D1AUMA3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -10V
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-20-87
- Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
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