IGN1214L500B
Integra Technologies Inc.
Integra Technologies Inc.
GAN, RF POWER TRANSISTOR, L-BAND
$1,018.30
Available to order
Reference Price (USD)
1+
$1018.30000
500+
$1008.117
1000+
$997.934
1500+
$987.751
2000+
$977.568
2500+
$967.385
Exquisite packaging
Discount
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The IGN1214L500B by Integra Technologies Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Active
- Transistor Type: HEMT
- Frequency: 1.2GHz ~ 1.4GHz
- Gain: 15dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 200 mA
- Power - Output: 650W
- Voltage - Rated: 160 V
- Package / Case: PL95A1
- Supplier Device Package: PL95A1
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