IGN1011L1200
Integra Technologies Inc.
Integra Technologies Inc.
GAN, RF POWER TRANSISTOR, L-BAND
$914.14
Available to order
Reference Price (USD)
1+
$914.14000
500+
$904.9986
1000+
$895.8572
1500+
$886.7158
2000+
$877.5744
2500+
$868.433
Exquisite packaging
Discount
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The IGN1011L1200 series by Integra Technologies Inc. sets new benchmarks in RF transistor technology. With patented noise-reduction architecture and gold metallization for corrosion resistance, these MOSFETs dominate in scientific research and satellite communications. Their plug-and-play compatibility simplifies integration. Elevate your design get a personalized quote within 24 hours!
Specifications
- Product Status: Active
- Transistor Type: HEMT
- Frequency: 1.03GHz ~ 1.09GHz
- Gain: 16.8dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 160 mA
- Power - Output: 1250W
- Voltage - Rated: 180 V
- Package / Case: PL84A1
- Supplier Device Package: PL84A1
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