IDT70P3337S233RMI
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 576FCBGA
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Experience next-gen storage solutions with Renesas Electronics America Inc IDT70P3337S233RMI Memory ICs, tailored for performance-driven applications. From enterprise storage to mobile devices, these ICs offer features like multi-level caching, wear leveling, and shock resistance. Renesas Electronics America Inc IDT70P3337S233RMI ensures your data is always accessible and secure. Send us your requirements today and let s collaborate on your next project!
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous QDR II
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 233 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.2 ns
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 576-BBGA, FCBGA
- Supplier Device Package: 576-FCBGA (25x25)
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