IDK10G120C5XTMA1
Infineon Technologies
Infineon Technologies
SIC DISCRETE
$6.24
Available to order
Reference Price (USD)
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$6.24000
500+
$6.1776
1000+
$6.1152
1500+
$6.0528
2000+
$5.9904
2500+
$5.928
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Experience next-level performance with Infineon Technologies's IDK10G120C5XTMA1 Single Rectifier Diodes, designed for high-power applications. These diodes provide excellent rectification efficiency, making them suitable for solar panels, electric vehicles, and UPS systems. Key features include high current density, fast recovery, and superior thermal management. Infineon Technologies stands by its products with rigorous testing and quality assurance. Need assistance? Contact our sales team now!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 31.9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
- Capacitance @ Vr, F: 525pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-2-1
- Operating Temperature - Junction: -55°C ~ 175°C
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