Shopping cart

Subtotal: $0.00

IDB45E60ATMA1

Infineon Technologies
IDB45E60ATMA1 Preview
Infineon Technologies
DIODE GEN PURP 600V 71A TO263-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 71A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 45 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Taiwan Semiconductor Corporation

RSFBLHMQG

Vishay General Semiconductor - Diodes Division

1N5408-E3/51

Taiwan Semiconductor Corporation

S8JCHR7G

Micro Commercial Co

MBRX02530-TP

Taiwan Semiconductor Corporation

S8MCHM6G

Taiwan Semiconductor Corporation

SS19LHMQG

Taiwan Semiconductor Corporation

RS1DL RFG

Taiwan Semiconductor Corporation

SR509 R0G

Rohm Semiconductor

1SR153-400T-32

Vishay General Semiconductor - Diodes Division

NSF8JT-E3/45

Top