Shopping cart

Subtotal: $0.00

IDB30E60ATMA1

Infineon Technologies
IDB30E60ATMA1 Preview
Infineon Technologies
DIODE GEN PURP 600V 52.3A TO263
$1.49
Available to order
Reference Price (USD)
1,000+
$1.37373
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Last Time Buy
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 52.3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 126 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
  • Operating Temperature - Junction: -40°C ~ 175°C

Related Products

Panasonic Electronic Components

MAU211100B

Microchip Technology

UPS540E3/TR13

Vishay General Semiconductor - Diodes Division

VS-12TQ040SHM3

Microchip Technology

JANS1N5312-1/TR

Panjit International Inc.

MB58_R1_00001

Microchip Technology

1N3612/TR

Powerex Inc.

R6011030XXYA

SMC Diode Solutions

12TQ040

Inventchip

IV1D12010O2

Panjit International Inc.

MBR1040HEWS_R1_00001

Top