IDB18E120ATMA1
Infineon Technologies
Infineon Technologies
DIODE GEN PURP 1.2KV 31A TO263-3
$1.05
Available to order
Reference Price (USD)
1+
$1.05000
500+
$1.0395
1000+
$1.029
1500+
$1.0185
2000+
$1.008
2500+
$0.9975
Exquisite packaging
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Optimize your circuitry with Infineon Technologies's IDB18E120ATMA1 Single Rectifier Diodes, tailored for seamless integration and high reliability. These diodes excel in applications such as voltage clamping, freewheeling, and reverse polarity protection. With features like high surge withstand capacity and low thermal resistance, they are a must-have for any electronics engineer. Infineon Technologies guarantees top-tier quality and performance. Ready to take the next step? Reach out for a detailed consultation!
Specifications
- Product Status: Obsolete
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 31A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 18 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 195 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
- Operating Temperature - Junction: -55°C ~ 150°C
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