HR1F3P(0)-T1-AZ
Renesas
Renesas
HR1F3 - COMPOUND TRANSISTOR
$0.42
Available to order
Reference Price (USD)
1+
$0.42150
500+
$0.417285
1000+
$0.41307
1500+
$0.408855
2000+
$0.40464
2500+
$0.400425
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HR1F3P(0)-T1-AZ by Renesas is a premier choice in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for precision and efficiency, featuring high gain bandwidth, low distortion, and excellent thermal management. Perfect for RF applications, sensor interfaces, and control systems. Renesas stands for quality and innovation. Reach out to us for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Resistor - Base (R1): 2 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: -
- Power - Max: 2 W
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SC-62
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