HN1C03F-B(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN 20V 0.3A SM6
$0.15
Available to order
Reference Price (USD)
3,000+
$0.15136
6,000+
$0.14159
15,000+
$0.13183
30,000+
$0.13020
Exquisite packaging
Discount
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Boost your circuit performance with Toshiba Semiconductor and Storage's HN1C03F-B(TE85L,F) BJT Arrays, offering exceptional reliability and versatility. These arrays provide high voltage tolerance, precise current control, and compact packaging, suitable for portable electronics and embedded systems. Frequently used in audio processing, sensor interfaces, and automation controls. Get started today send us your requirements and we ll provide the best solution for your project!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
- Power - Max: 300mW
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
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