HN1B04FE-Y,LXHF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q PNP + NPN TR VCEO:-50
$0.46
Available to order
Reference Price (USD)
1+
$0.46000
500+
$0.4554
1000+
$0.4508
1500+
$0.4462
2000+
$0.4416
2500+
$0.437
Exquisite packaging
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Discover high-performance HN1B04FE-Y,LXHF Bipolar Junction Transistor Arrays from Toshiba Semiconductor and Storage, designed for reliable and efficient circuit applications. These transistor arrays feature excellent current handling, low saturation voltage, and high-speed switching capabilities, making them ideal for amplification and switching tasks. Perfect for use in industrial automation, consumer electronics, and communication devices. Contact us today for a quote and let our experts assist you with your specific requirements!
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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