HN1B04F(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP 30V 0.5A SM6
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Optimize your designs with the HN1B04F(TE85L,F) Transistor Arrays by Toshiba Semiconductor and Storage, providing superior electrical characteristics and reliability. Features include low on-resistance, high current gain, and ESD protection, perfect for sensitive and high-power applications. Ideal for use in medical devices, power converters, and consumer gadgets. Let s collaborate send us your specifications and we ll deliver the perfect solution for your needs!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
- Power - Max: 300mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
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