HIP6601BECBZ
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR HALF-BRIDGE 8SOIC
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The HIP6601BECBZ Gate Drivers from Renesas Electronics America Inc deliver unmatched performance for your power management needs. These ICs are packed with features like fast switching, high voltage tolerance, and minimal propagation delay, ideal for use in telecom infrastructure, renewable energy, and home automation. Renesas Electronics America Inc prides itself on providing solutions that exceed expectations. Contact us now to find out how we can help you achieve your goals.
Specifications
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8V ~ 13.2V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 15 V
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: 0°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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