HGTP3N60A4
Harris Corporation
Harris Corporation
N-CHANNEL IGBT
$1.29
Available to order
Reference Price (USD)
800+
$1.35986
Exquisite packaging
Discount
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Enhance your electronic designs with HGTP3N60A4 Single IGBTs from Harris Corporation, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. Harris Corporation's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 17 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
- Power - Max: 70 W
- Switching Energy: 37µJ (on), 25µJ (off)
- Input Type: Standard
- Gate Charge: 21 nC
- Td (on/off) @ 25°C: 6ns/73ns
- Test Condition: 390V, 3A, 50Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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