HGT4E30N60B3S
Harris Corporation
Harris Corporation
IGBT 60A, 600V, N CHANNEL, TO 26
$4.43
Available to order
Reference Price (USD)
1+
$4.43000
500+
$4.3857
1000+
$4.3414
1500+
$4.2971
2000+
$4.2528
2500+
$4.2085
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic projects with HGT4E30N60B3S by Harris Corporation, a top choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single offer superior performance with features like low noise and high gain, making them suitable for a wide range of applications. Whether you're working on consumer electronics or industrial systems, HGT4E30N60B3S provides the reliability you need. Ready to enhance your designs? Submit an inquiry now and experience the Harris Corporation difference.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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