HGT1S20N60C3S9A
onsemi
onsemi
IGBT 600V 45A TO263AB
$0.00
Available to order
Reference Price (USD)
800+
$2.71540
1,600+
$2.31098
2,400+
$2.20728
Exquisite packaging
Discount
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Choose HGT1S20N60C3S9A Single IGBTs by onsemi for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. onsemi's reputation for quality makes HGT1S20N60C3S9A a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 45 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
- Power - Max: 164 W
- Switching Energy: 295µJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 91 nC
- Td (on/off) @ 25°C: 28ns/151ns
- Test Condition: 480V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK (TO-263)
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