HGT1S15N120C3
Harris Corporation
Harris Corporation
35A, 1200V, N-CHANNEL IGBT
$3.71
Available to order
Reference Price (USD)
1+
$3.71000
500+
$3.6729
1000+
$3.6358
1500+
$3.5987
2000+
$3.5616
2500+
$3.5245
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize energy efficiency with HGT1S15N120C3 Single IGBTs by Harris Corporation, a trusted name in discrete semiconductors. Suitable for solar inverters, motor controllers, and more, these transistors feature low conduction loss and high switching frequency. Their robust design ensures long-term performance even in harsh environments. Choose HGT1S15N120C3 for your next project and experience the Harris Corporation difference. Submit your inquiry today for expert assistance!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
- Power - Max: 164 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 100 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: I2PAK (TO-262)
Related Products
Infineon Technologies
IGA30N60H3XKSA1
Alpha & Omega Semiconductor Inc.
AOTF20B65LN2
Infineon Technologies
AIKW30N60CTXKSA1
STMicroelectronics
STGB20V60DF
onsemi
AFGY100T65SPD
Rohm Semiconductor
RGTH00TS65DGC11
STMicroelectronics
STGW40V60DF
Rohm Semiconductor
RGT30NS65DGC9
onsemi
FGH60N60SMD
IXYS