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HER3L03G

Taiwan Semiconductor Corporation
HER3L03G Preview
Taiwan Semiconductor Corporation
50NS, 3A, 200V, HIGH EFFICIENT R
$0.66
Available to order
Reference Price (USD)
1+
$0.66000
500+
$0.6534
1000+
$0.6468
1500+
$0.6402
2000+
$0.6336
2500+
$0.627
Exquisite packaging
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Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 3 µA @ 200 V
  • Capacitance @ Vr, F: 54pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C

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