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HAT2201WP-EL-E

Renesas Electronics America Inc
HAT2201WP-EL-E Preview
Renesas Electronics America Inc
15A, 100V, N-CHANNEL MOSFET
$1.17
Available to order
Reference Price (USD)
1+
$1.17000
500+
$1.1583
1000+
$1.1466
1500+
$1.1349
2000+
$1.1232
2500+
$1.1115
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-PowerWDFN

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