HAT2172N-EL-E
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 40V 30A 8LFPAK
$1.71
Available to order
Reference Price (USD)
1+
$1.71000
500+
$1.6929
1000+
$1.6758
1500+
$1.6587
2000+
$1.6416
2500+
$1.6245
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with HAT2172N-EL-E, a premium Transistors - FETs, MOSFETs - Single from Renesas Electronics America Inc. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust HAT2172N-EL-E for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 7.8mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK-iV
- Package / Case: 8-PowerSOIC (0.154", 3.90mm Width)
Related Products
Vishay Siliconix
SISH108DN-T1-GE3
Diodes Incorporated
DMN65D8LV-7
PN Junction Semiconductor
P3M17040K4
Microchip Technology
APT10021JFLL
Microchip Technology
MSC100SM70JCU3
Nexperia USA Inc.
BUK9609-40B,118
Infineon Technologies
AUIRLR2905ZTRL
onsemi
FDY300NZ
Vishay Siliconix
SUD23N06-31L-T4-E3
Panjit International Inc.