GT60N321(Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
IGBT 1000V 60A 170W TO3P LH
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize power control with GT60N321(Q) Single IGBTs from Toshiba Semiconductor and Storage, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Toshiba Semiconductor and Storage ensures GT60N321(Q) meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
- Power - Max: 170 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 330ns/700ns
- Test Condition: -
- Reverse Recovery Time (trr): 2.5 µs
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(LH)
Related Products
Infineon Technologies
IRGIB4610DPBF
IXYS
FID35-06C
Infineon Technologies
IRG7CH73UEF-R
onsemi
PCISL9R860W
IXYS
LGB8204ATH
onsemi
PCFG40T65SHW
Toshiba Semiconductor and Storage
GT50J121(Q)
Infineon Technologies
IRGC25B120UB
onsemi
STKSF1U3E2D-E
Littelfuse Inc.