GT30J341,Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
IGBT TRANS 600V 30A TO3PN
$2.58
Available to order
Reference Price (USD)
1+
$2.57550
500+
$2.549745
1000+
$2.52399
1500+
$2.498235
2000+
$2.47248
2500+
$2.446725
Exquisite packaging
Discount
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Choose GT30J341,Q Single IGBTs by Toshiba Semiconductor and Storage for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Toshiba Semiconductor and Storage's reputation for quality makes GT30J341,Q a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 59 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 230 W
- Switching Energy: 800µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 80ns/280ns
- Test Condition: 300V, 30A, 24Ohm, 15V
- Reverse Recovery Time (trr): 50 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P(N)
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