Shopping cart

Subtotal: $0.00

GS2M-F1-0000HF

Yangzhou Yangjie Electronic Technology Co.,Ltd
GS2M-F1-0000HF Preview
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 1000V 2A DO214AC
$0.35
Available to order
Reference Price (USD)
1+
$0.35000
500+
$0.3465
1000+
$0.343
1500+
$0.3395
2000+
$0.336
2500+
$0.3325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Vishay General Semiconductor - Diodes Division

VS-5EWH06FNTRLHM3

Panjit International Inc.

PG5404_R2_00001

Vishay General Semiconductor - Diodes Division

1N5396-E3/54

Solid State Inc.

1N1196RA

Global Power Technology-GPT

G5S12008D

Vishay General Semiconductor - Diodes Division

SE20FJ-M3/I

PN Junction Semiconductor

P3D06006T2

Panjit International Inc.

ER501A_R2_00001

NTE Electronics, Inc

NTE6065

Top