GPAS1006 MNG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 10A TO263AB
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Reference Price (USD)
4,000+
$0.26100
Exquisite packaging
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Revolutionize your power electronics with Taiwan Semiconductor Corporation's GPAS1006 MNG Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Taiwan Semiconductor Corporation provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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