Shopping cart

Subtotal: $0.00

GPAS1001 MNG

Taiwan Semiconductor Corporation
GPAS1001 MNG Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 10A TO263AB
$0.00
Available to order
Reference Price (USD)
4,000+
$0.26100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D²PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Diodes Incorporated

B360-13

Vishay General Semiconductor - Diodes Division

RS1DHE3/5AT

Taiwan Semiconductor Corporation

ES1BLHMHG

Taiwan Semiconductor Corporation

SFAF2006G C0G

Taiwan Semiconductor Corporation

SRAF540

Rectron USA

FM302

Micro Commercial Co

EM516-TP

Vishay General Semiconductor - Diodes Division

GP10JE-M3/73

Fairchild Semiconductor

RURD4120S9A

Top