GPA040A120MN-FD
SemiQ

SemiQ
IGBT 1200V 80A 480W TO3PN
$0.00
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Reference Price (USD)
2,500+
$3.19200
Exquisite packaging
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The GPA040A120MN-FD Single IGBT by SemiQ sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with SemiQ for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
- Power - Max: 480 W
- Switching Energy: 5.3mJ (on), 1.1mJ (off)
- Input Type: Standard
- Gate Charge: 480 nC
- Td (on/off) @ 25°C: 55ns/200ns
- Test Condition: 600V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr): 200 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN