GPA025A120MN-ND
SemiQ
SemiQ
IGBT 1200V 50A 312W TO3PN
$0.00
Available to order
Reference Price (USD)
2,500+
$1.72900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize energy efficiency with GPA025A120MN-ND Single IGBTs by SemiQ, a trusted name in discrete semiconductors. Suitable for solar inverters, motor controllers, and more, these transistors feature low conduction loss and high switching frequency. Their robust design ensures long-term performance even in harsh environments. Choose GPA025A120MN-ND for your next project and experience the SemiQ difference. Submit your inquiry today for expert assistance!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT and Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
- Power - Max: 312 W
- Switching Energy: 4.15mJ (on), 870µJ (off)
- Input Type: Standard
- Gate Charge: 350 nC
- Td (on/off) @ 25°C: 57ns/240ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 480 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
Related Products
Infineon Technologies
IRGR2B60KDTRRPBF
Infineon Technologies
IRGP4263D1-EPBF
Infineon Technologies
IRG4PC50U
Infineon Technologies
IKD15N60RF
IXYS
IXGT32N60BD1
Infineon Technologies
IRG7PH42UD1PBF
Renesas Electronics America Inc
RJH60D6DPK-00#T0
STMicroelectronics
STGP12NB60KD
Renesas Electronics America Inc
RJH60D0DPK-00#T0
IXYS