GPA015A120MN-ND
SemiQ
SemiQ
IGBT 1200V 30A 212W TO3PN
$0.00
Available to order
Reference Price (USD)
2,500+
$1.46300
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize power control with GPA015A120MN-ND Single IGBTs from SemiQ, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. SemiQ ensures GPA015A120MN-ND meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT and Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
- Power - Max: 212 W
- Switching Energy: 1.61mJ (on), 530µJ (off)
- Input Type: Standard
- Gate Charge: 210 nC
- Td (on/off) @ 25°C: 25ns/166ns
- Test Condition: 600V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): 320 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
Related Products
STMicroelectronics
STGWT60H60DLFB
IXYS
IXRR40N120
IXYS
IXGH32N60AU1
onsemi
NGD15N41ACLT4G
Littelfuse Inc.
NGB8206NT4G
Infineon Technologies
SIGC03T60EX1SA1
Fairchild Semiconductor
ISL9V5036S3
IXYS
IXDP35N60B
Infineon Technologies
63-9015
Infineon Technologies