GB2X100MPS12-227
GeneSiC Semiconductor

GeneSiC Semiconductor
SIC DIODE 1200V 200A SOT-227
$144.69
Available to order
Reference Price (USD)
1+
$141.35000
10+
$132.11100
30+
$127.49200
Exquisite packaging
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Discover high-quality GB2X100MPS12-227 from GeneSiC Semiconductor, a leading solution in the Discrete Semiconductor Products category, specifically designed for Diodes - Rectifiers - Arrays applications. Our products are engineered for reliability and efficiency, making them ideal for various industrial and commercial uses. The GB2X100MPS12-227 features excellent performance in rectification and array configurations, ensuring stable and consistent operation. Whether you need components for power supplies, converters, or other electronic devices, GeneSiC Semiconductor's diodes are the perfect choice. Contact us today for more details and to request a quote!
Specifications
- Product Status: Active
- Diode Configuration: 2 Independent
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 185A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227