GB01SLT12-252
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE SILICON 1.2KV 1A TO252
$1.49
Available to order
Reference Price (USD)
2,500+
$1.22691
5,000+
$1.18147
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Revolutionize your power electronics with GeneSiC Semiconductor's GB01SLT12-252 Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. GeneSiC Semiconductor provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
- Capacitance @ Vr, F: 69pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
onsemi
MURA210T3G
Micro Commercial Co
SK32B-LTP
Infineon Technologies
BAT54B5000
onsemi
NSD914XV2T1G
Nexperia USA Inc.
BAS21W,115
onsemi
RD0506T-TL-H
onsemi
NRTS15100PFST3G
Vishay General Semiconductor - Diodes Division
SD101BW-G3-08
Taiwan Semiconductor Corporation
F1T5G
Vishay General Semiconductor - Diodes Division