G5S12040PP
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 40A 2-P
$46.33
Available to order
Reference Price (USD)
1+
$46.33000
500+
$45.8667
1000+
$45.4034
1500+
$44.9401
2000+
$44.4768
2500+
$44.0135
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the G5S12040PP from Global Power Technology-GPT for superior Diodes - Rectifiers - Arrays solutions within the Discrete Semiconductor Products range. These diodes are optimized for precision and durability, making them suitable for high-stakes applications. The G5S12040PP features excellent thermal performance and high surge current tolerance, ensuring reliability in harsh environments. Global Power Technology-GPT is a name you can trust for cutting-edge semiconductor technology. Don t hesitate contact us now for more information and to request a quote!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 115A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
Related Products
onsemi
MURHF860CTG
Infineon Technologies
DD435N36KHPSA1
onsemi
MBRD1035CTLT4
Vishay General Semiconductor - Diodes Division
V60DM100CHM3/I
Vishay General Semiconductor - Diodes Division
V60100C-M3/4W
Littelfuse Inc.
MBRF2045CT
Rohm Semiconductor
RB558WMTL
Central Semiconductor Corp
CMSSH-3AE TR PBFREE
Vishay General Semiconductor - Diodes Division
FEPB16CT-E3/81
GeneSiC Semiconductor