G5S12005C
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 5A 2-PI
$7.96
Available to order
Reference Price (USD)
1+
$7.96000
500+
$7.8804
1000+
$7.8008
1500+
$7.7212
2000+
$7.6416
2500+
$7.562
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize efficiency with Global Power Technology-GPT's G5S12005C Single Rectifier Diodes, the go-to choice for professionals seeking reliable power rectification. Suitable for high-frequency applications, these diodes provide fast recovery times and low conduction losses. Commonly used in switch-mode power supplies, welding equipment, and battery chargers, they are built to withstand harsh environments. Features include high surge current ratings and robust packaging. Don't miss out request a sample or quote today!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 20.95A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 424pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
STMicroelectronics
STPS6M100SF
Diodes Incorporated
SDT10A100P5-7D
NXP USA Inc.
PMBD914/DG215
Diodes Incorporated
SDT5H100P5-13
Microchip Technology
JANTX1N5623/TR
Microchip Technology
JAN1N4153-1
Vishay General Semiconductor - Diodes Division
SSC53L-E3/57T
Micro Commercial Co
SK3150B-LTP
Micro Commercial Co
HER106G-TP
Comchip Technology